N-Channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS Toshiba 2SK3564(STA4,Q,M)

Discontinued product

Technical Reference

MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	900 V
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.3 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	40 W @ 25 °C
Transistor Configuration	Single
Maximum Gate Source Voltage	+30 V
Transistor Material	Si
Typical Gate Charge @ Vgs	17 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Length	10mm
Forward Diode Voltage	-1.9V
Height	15mm