- RS Stock No.:
- 194-8810
- Mfr. Part No.:
- CY15B104QN-50SXI
- Brand:
- Cypress Semiconductor
Discontinued product
- RS Stock No.:
- 194-8810
- Mfr. Part No.:
- CY15B104QN-50SXI
- Brand:
- Cypress Semiconductor
Technical Reference
Legislation and Compliance
Product Details
Low power, 4-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. Uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.
Specifications
Attribute | Value |
---|---|
Memory Size | 4Mbit |
Organisation | 512K x 8 bit |
Interface Type | Serial-SPI |
Data Bus Width | 8bit |
Maximum Random Access Time | 450 (Minimum)µs |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 5.33 x 5.33 x 1.78mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Minimum Operating Temperature | -40 °C |
Minimum Operating Supply Voltage | 1.8 V |
Number of Bits per Word | 8bit |
Number of Words | 512K |
- RS Stock No.:
- 194-8810
- Mfr. Part No.:
- CY15B104QN-50SXI
- Brand:
- Cypress Semiconductor