- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Brand:
- IXYS
Available to back order for despatch when stock is available
Added
Price Each
Kr. 1 044,74
(exc. VAT)
Kr. 1 305,92
(inc. VAT)
Units | Per unit |
1 - 1 | Kr. 1 044,74 |
2 - 4 | Kr. 957,67 |
5 - 9 | Kr. 884,02 |
10 - 19 | Kr. 838,99 |
20 + | Kr. 822,50 |
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 270 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | Y3 DCB |
Configuration | Series |
Mounting Type | Screw Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 110 x 62 x 30mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Brand:
- IXYS