IXYS MIXA300PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 465 A max, 1200 V, PCB Mount
- RS Stock No.:
- 124-0711
- Mfr. Part No.:
- MIXA300PF1200TSF
- Brand:
- IXYS
Discontinued product
- RS Stock No.:
- 124-0711
- Mfr. Part No.:
- MIXA300PF1200TSF
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 465 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 1.5 kW |
Package Type | SimBus F |
Configuration | Dual |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 152 x 62 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |