- RS Stock No.:
- 124-3700
- Mfr. Part No.:
- RJH60D3DPP-M0#T2
- Brand:
- Renesas Electronics
In stock for same day dispatch
Not available for next day delivery
Added
Price Each (In a Pack of 2)
Kr. 35,395
(exc. VAT)
Kr. 44,244
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 2 | Kr. 35,395 | Kr. 70,79 |
4 - 8 | Kr. 31,905 | Kr. 63,81 |
10 - 48 | Kr. 29,015 | Kr. 58,03 |
50 - 98 | Kr. 26,57 | Kr. 53,14 |
100 + | Kr. 24,525 | Kr. 49,05 |
*price indicative |
- RS Stock No.:
- 124-3700
- Mfr. Part No.:
- RJH60D3DPP-M0#T2
- Brand:
- Renesas Electronics
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 35 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 40 W |
Package Type | TO-220FL |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10 x 4.5 x 15mm |
Gate Capacitance | 900pF |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 124-3700
- Mfr. Part No.:
- RJH60D3DPP-M0#T2
- Brand:
- Renesas Electronics