STMicroelectronics STGD19N40LZ IGBT, 25 A 425 V, 3-Pin DPAK (TO-252)

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 25 A
Maximum Collector Emitter Voltage 425 V
Maximum Gate Emitter Voltage ±16V
Maximum Power Dissipation 125 W
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 6.6mm
Width 6.2mm
Height 2.4mm
Dimensions 6.6 x 6.2 x 2.4mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Available to back order for despatch when stock is available
Price Each (On a Reel of 2500)
kr 7,35
(exc. VAT)
kr 9,19
(inc. VAT)
Units
Per unit
Per Reel*
2500 +
kr 7,35
kr 18 375,00
*price indicative