- RS Stock No.:
- 906-2808
- Mfr. Part No.:
- STGP5H60DF
- Brand:
- STMicroelectronics
70 In stock for same day dispatch
Added
Price Each (In a Pack of 10)
Kr. 12,532
(exc. VAT)
Kr. 15,665
(inc. VAT)
Units | Per unit | Per Pack* |
10 - 40 | Kr. 12,532 | Kr. 125,32 |
50 - 90 | Kr. 12,177 | Kr. 121,77 |
100 - 240 | Kr. 11,888 | Kr. 118,88 |
250 - 490 | Kr. 11,577 | Kr. 115,77 |
500 + | Kr. 11,266 | Kr. 112,66 |
*price indicative |
- RS Stock No.:
- 906-2808
- Mfr. Part No.:
- STGP5H60DF
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 88 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 15.75mm |
Minimum Operating Temperature | -55 °C |
Gate Capacitance | 855pF |
Energy Rating | 221mJ |
Maximum Operating Temperature | +175 °C |