N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220 Toshiba TK25E60X,S1X(S
- RS Stock No.:
- 125-0555
- Mfr. Part No.:
- TK25E60X,S1X(S
- Brand:
- Toshiba
In stock for same day dispatch
Not available for next day delivery
Added
Price Each (In a Pack of 5)
Kr. 29,508
(exc. VAT)
Kr. 36,885
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | Kr. 29,508 | Kr. 147,54 |
| 25 - 45 | Kr. 25,22 | Kr. 126,10 |
| 50 - 120 | Kr. 23,086 | Kr. 115,43 |
| 125 - 245 | Kr. 22,798 | Kr. 113,99 |
| 250 + | Kr. 22,532 | Kr. 112,66 |
| *price indicative | ||
- RS Stock No.:
- 125-0555
- Mfr. Part No.:
- TK25E60X,S1X(S
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Series | DTMOSIV |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 180 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 4.45mm |
| Length | 10.16mm |
| Forward Diode Voltage | 1.7V |
| Height | 15.1mm |
- RS Stock No.:
- 125-0555
- Mfr. Part No.:
- TK25E60X,S1X(S
- Brand:
- Toshiba