N-Channel MOSFET, 110 mA, 240 V, 3-Pin SOT-23 Infineon BSS131H6327XTSA1
- RS Stock No.:
- 165-5867
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 29.08.2024
Added
Price Each (On a Reel of 3000)
Kr. 0,659
(exc. VAT)
Kr. 0,824
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | Kr. 0,659 | Kr. 1 977,00 |
| 6000 - 12000 | Kr. 0,626 | Kr. 1 878,00 |
| 15000 + | Kr. 0,587 | Kr. 1 761,00 |
| *price indicative | ||
- RS Stock No.:
- 165-5867
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 mA |
| Maximum Drain Source Voltage | 240 V |
| Series | SIPMOS |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 2.1 nC @ 10 V |
| Length | 2.9mm |
| Transistor Material | Si |
| Width | 1.3mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 165-5867
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon