N-Channel MOSFET, 50 A, 50 V, 3-Pin DPAK Vishay SQD50N05-11L_GE3
- RS Stock No.:
- 170-8302
- Mfr. Part No.:
- SQD50N05-11L_GE3
- Brand:
- Vishay
Available to back order for despatch 11.10.2024
Added
Price Each (On a Reel of 2000)
Kr. 7,77
(exc. VAT)
Kr. 9,71
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2000 + | Kr. 7,77 | Kr. 15 540,00 |
| *price indicative | ||
- RS Stock No.:
- 170-8302
- Mfr. Part No.:
- SQD50N05-11L_GE3
- Brand:
- Vishay
Legislation and Compliance
Product Details
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 50 V |
| Package Type | DPAK (TO-252) |
| Series | SQ Rugged |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 75 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Typical Gate Charge @ Vgs | 34.6 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Height | 2.38mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |