N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5
- RS Stock No.:
- 171-2526P
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
View all MOSFETs
Available to back order for despatch 21.11.2023
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
kr 37,45
(exc. VAT)
kr 46,81
(inc. VAT)
| Units | Per unit |
| 10 - 98 | kr 37,45 |
| 100 - 498 | kr 34,08 |
| 500 - 998 | kr 31,255 |
| 1000 + | kr 28,81 |
Packaging Options:
- RS Stock No.:
- 171-2526P
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
Specifications
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 30.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 109 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 240 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 8mm |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V |
| Length | 8mm |
| Forward Diode Voltage | 1.7V |
| Height | 0.85mm |