- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Tube of 800)
Kr. 56,705
(exc. VAT)
Kr. 70,881
(inc. VAT)
Units | Per unit | Per Tube* |
800 + | Kr. 56,705 | Kr. 45 364,00 |
*price indicative |
- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
Specifications
Attribute | Value |
---|---|
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Power Dissipation | 240 W |
Transistor Configuration | Single |
Length | 10.67mm |
Width | 4.8mm |
Transistor Material | SiC |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Height | 16.51mm |
Forward Diode Voltage | 2.4V |
Minimum Operating Temperature | -55 °C |