SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L045N065SC1
- RS Stock No.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
Available to back order for despatch 17.06.2024
Added
Price Each (In a Tube of 450)
Kr. 103,874
(exc. VAT)
Kr. 129,842
(inc. VAT)
| Units | Per unit | Per Tube* |
| 450 + | Kr. 103,874 | Kr. 46 743,30 |
| *price indicative | ||
- RS Stock No.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.05 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
| Series | SiC Power |