N-Channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 Microchip LND150N3-G
- RS Stock No.:
- 829-3250
- Mfr. Part No.:
- LND150N3-G
- Brand:
- Microchip
140 In stock for same day dispatch
Added
Price Each (In a Pack of 20)
Kr. 6,127
(exc. VAT)
Kr. 7,659
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 20 | Kr. 6,127 | Kr. 122,54 |
| 40 - 80 | Kr. 5,797 | Kr. 115,94 |
| 100 + | Kr. 5,198 | Kr. 103,96 |
| *price indicative | ||
- RS Stock No.:
- 829-3250
- Mfr. Part No.:
- LND150N3-G
- Brand:
- Microchip
Technical Reference
Legislation and Compliance
Product Details
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip LND150 N-channel depletion mode (normally-on) transistor utilizes lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. It has Drain-to-source and Drain-to-gate voltage of 500V and static drain-to-source on-state resistance of 1kΩ.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
Lead (Pb)-free
3-lead TO-92 package
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 mA |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1 kΩ |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 740 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 5.2mm |
| Width | 4.19mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 5.33mm |