- RS Stock No.:
- 176-9786
- Mfr. Part No.:
- UV-100L
- Brand:
- OSI Optoelectronics
Available to back order for despatch 31.05.2024
Added
Price Each
Kr. 2 294,88
(exc. VAT)
Kr. 2 868,60
(inc. VAT)
Units | Per unit |
1 - 4 | Kr. 2 294,88 |
5 - 9 | Kr. 2 175,56 |
10 - 24 | Kr. 2 067,68 |
25 + | Kr. 1 989,58 |
- RS Stock No.:
- 176-9786
- Mfr. Part No.:
- UV-100L
- Brand:
- OSI Optoelectronics
Technical Reference
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- US
Product Details
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias.
Product Applications
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response
Pollution Monitoring
Medical Instrumentation
UV Exposure Meters
Spectroscopy
Water Purification
Fluorescence
Product Features
Inversion series: 100% Internal QE
Ultra High Shunt Resistance
Excellent UV Response
Specifications
Attribute | Value |
---|---|
Wavelength of Peak Sensitivity | 254nm |
Package Type | Low Profile |
Amplifier Function | No |
Mounting Type | Through Hole |
Number of Pins | 3 |
Diode Material | Si |
Minimum Wavelength Detected | UV-100L |
Maximum Wavelength Detected | 254nm |
Length | 24.76mm |
Height | 4.826mm |
Diameter | 25.4mm |
Peak Photo Sensitivity | 0.14A/W |
Series | UV |
Shunt Resistance | 10000KΩ |
Typical Rise Time | 5.9ns |