MOSFET SiC HalfBridgeModule 1.2kV 450A

  • RS Stock No. 192-3386
  • Mfr. Part No. CAB450M12XM3
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

High Power Density Footprint
High Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction-Optimized Third Generation MOSFET Technology
Terminal Layout Simplifies Bus Bar Design
Integrated Temperature Sensing
Dedicated Drain-Kelvin Pin
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor & Traction Drives
UPS
EV Chargers

Specifications
Attribute Value
Maximum Drain Source Voltage 1200 V
Maximum Drain Source Resistance 4.6 mΩ
Maximum Gate Threshold Voltage 3.6V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 50 mW
Maximum Gate Source Voltage -4 V, 19 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 1330 nC @ 4/15V
Height 15.75mm
Maximum Operating Temperature +175 °C
Length 80mm
Width 53mm
Minimum Operating Temperature -40 °C
Transistor Material SiC
3 In stock for delivery within 1 working days
Price Each
kr 9 937,21
(exc. VAT)
kr 12 421,51
(inc. VAT)
Units
Per unit
1 - 1
kr 9 937,21
2 +
kr 9 848,95