BGA5M1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 19.3 dB 2200 MHz, 6-Pin TSNP-6-10

The Infineon high gain low noise amplifier for LTE mid band is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. In bypass mode the LNA provides an insertion loss of 4.7 dB. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control.

B9HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Low external component count
Pb-free (RoHS compliant) package