BGA5M1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 19.3 dB 2200 MHz, 6-Pin TSNP-6-10
- RS Stock No.:
- 258-0661P
- Mfr. Part No.:
- BGA5M1BN6E6327XTSA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 258-0661P
- Mfr. Part No.:
- BGA5M1BN6E6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon high gain low noise amplifier for LTE mid band is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. In bypass mode the LNA provides an insertion loss of 4.7 dB. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control.
B9HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Low external component count
Pb-free (RoHS compliant) package
RF output internally matched to 50 Ohm
Low external component count
Pb-free (RoHS compliant) package
Specifications
Attribute | Value |
|---|---|
| Amplifier Type | Low Noise |
| Typical Power Gain | 19.3 dB |
| Typical Output Power | 60mW |
| Typical Noise Figure | 1.15dB |
| Maximum Operating Frequency | 2200 MHz |
| Package Type | TSNP-6-10 |
| Pin Count | 6 |
- RS Stock No.:
- 258-0661P
- Mfr. Part No.:
- BGA5M1BN6E6327XTSA1
- Brand:
- Infineon