Cypress Semiconductor, CY62158ELL-45ZSXI

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Wide voltage range: 4.5 V–5.5 V
Ultra low active power
Typical active current:1.8 mA at f = 1 MHz
Typical active current: 18 mA at f = fmax
Ultra low standby power
Typical standby current: 2 μA
Maximum standby current: 8 μA
Easy memory expansion with CE1, CE2 and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 44-pin TSOP II package

SRAM (Static Random Access Memory)

Specifications
Attribute Value
Memory Size 8Mbit
Organisation 512k x 16 bit
Number of Words 512k
Number of Bits per Word 16bit
Maximum Random Access Time 45ns
Address Bus Width 8bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Height 1.04mm
Minimum Operating Supply Voltage 4.5 V
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +85 °C
Maximum Operating Supply Voltage 5.5 V
Length 18.51mm
Width 10.26mm
Available to back order for despatch 29.05.2020
Price Each (In a Tray of 135)
kr 84,026
(exc. VAT)
kr 105,032
(inc. VAT)
Units
Per unit
Per Tray*
135 +
kr 84,026
kr 11 343,51
*price indicative
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