onsemi MMBT5550LT1G NPN High Voltage Transistor, 600 mA NPN, 140 V dc, 3-Pin SOT-23
- RS Stock No.:
- 765-318
- Mfr. Part No.:
- MMBT5550LT1G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 200 units)*
Kr. 30,40
(exc. VAT)
Kr. 38,00
(inc. VAT)
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- Shipping from 22 June 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 200 - 1800 | Kr. 0,152 | Kr. 30,40 |
| 2000 - 4800 | Kr. 0,149 | Kr. 29,80 |
| 5000 - 19800 | Kr. 0,145 | Kr. 29,00 |
| 20000 + | Kr. 0,135 | Kr. 27,00 |
*price indicative
- RS Stock No.:
- 765-318
- Mfr. Part No.:
- MMBT5550LT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | NPN High Voltage Transistor | |
| Maximum DC Collector Current Idc | 600mA | |
| Maximum Collector Emitter Voltage Vceo | 140V dc | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 160V dc | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 6V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 225mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 1.4mm | |
| Series | MMBT5550L | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type NPN High Voltage Transistor | ||
Maximum DC Collector Current Idc 600mA | ||
Maximum Collector Emitter Voltage Vceo 140V dc | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 160V dc | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 6V dc | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 225mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.01mm | ||
Standards/Approvals RoHS Compliant | ||
Width 1.4mm | ||
Series MMBT5550L | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The onsemi NPN silicon transistor designed for applications requiring high voltage capabilities. With an impressive collector-emitter voltage rating of 140V, this device is engineered for optimum reliability in automotive and other industrial applications demanding stringent performance standards. Its Pb-free and halogen-free construction further reflects its compatibility with contemporary environmental regulations, ensuring compliance without compromising quality. Optimized for continuous collector currents of up to 600mA, this transistor excels in high-speed switching operations, offering minimal delays and enhanced efficiency for various electronic circuits.
High voltage capability with collector-emitter voltage ratings up to 140V
Designed for a continuous collector current of 600mA, supporting demanding applications
Pb-free and halogen-free construction complies with RoHS standards, promoting environmental safety
AEC-Q101 qualified, ensuring reliability in automotive and critical applications
Optimised for fast switching speeds, facilitating efficient circuit operation
Low collector-emitter saturation voltage, enhancing overall energy efficiency
Enhanced thermal stability with low thermal resistance, improving performance in high-temperature environments
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