Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.

60 V, 6 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY.

High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement

Select all	Attribute	Value
	Brand	Nexperia
	Transistor Type	PNP
	Maximum DC Collector Current	-6 A
	Maximum Collector Emitter Voltage	-60 V
	Package Type	LFPAK56, SOT669
	Mounting Type	Surface Mount
	Maximum Power Dissipation	25 W
	Minimum DC Current Gain	120
	Transistor Configuration	Single
	Maximum Collector Base Voltage	-60 V
	Maximum Emitter Base Voltage	-8 V
	Maximum Operating Frequency	110 MHz
	Pin Count	4 + Tab
	Number of Elements per Chip	1
	Dimensions	5 x 4.1 x 1.05mm
	Maximum Operating Temperature	+175 °C

	Select all
	Brand Nexperia
	Transistor Type PNP
	Maximum DC Collector Current -6 A
	Maximum Collector Emitter Voltage -60 V
	Package Type LFPAK56, SOT669
	Mounting Type Surface Mount
	Maximum Power Dissipation 25 W
	Minimum DC Current Gain 120
	Transistor Configuration Single
	Maximum Collector Base Voltage -60 V
	Maximum Emitter Base Voltage -8 V
	Maximum Operating Frequency 110 MHz
	Pin Count 4 + Tab
	Number of Elements per Chip 1
	Dimensions 5 x 4.1 x 1.05mm
	Maximum Operating Temperature +175 °C

Nexperia PHPT60606PYX PNP Transistor, -6 A, -60 V, 4 + Tab-Pin LFPAK56, SOT669

FREE delivery for online orders over 500,00 kr

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