onsemi Transistor, 30 A NPN, 250 V, 3-Pin TO-218

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Subtotal (1 tube of 30 units)*

Kr. 1 315,14

(exc. VAT)

Kr. 1 643,94

(inc. VAT)

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Temporarily out of stock
  • Shipping from 28 August 2026
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Units
Per unit
Per Tube*
30 - 90Kr. 43,838Kr. 1 315,14
120 - 480Kr. 37,615Kr. 1 128,45
510 - 990Kr. 33,451Kr. 1 003,53
1020 +Kr. 32,139Kr. 964,17

*price indicative

RS Stock No.:
184-0973
Mfr. Part No.:
MJH11020G
Brand:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

30A

Maximum Collector Emitter Voltage Vceo

250V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

200V

Maximum Emitter Base Voltage VEBO

5V

Minimum DC Current Gain hFE

100

Maximum Power Dissipation Pd

150W

Maximum Transition Frequency ft

1MHz

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

3

Length

16.26mm

Standards/Approvals

No

Height

33.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.

High DC Current Gain @ 10 Adc -

hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

VCEO(sus) = 200 Vdc (Min) - MJH11020, 19

VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

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