onsemi FDC8601 Digital Transistor, 6-Pin TSOT-23

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Max rDS(on) = 109 mΩat VGS = 10 V, ID = 2.7 A
Max rDS(on) = 176 mΩat VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
Applications
This product is general usage and suitable for many different applications.