onsemi MJB45H11T4G Digital Transistor, -80 V PNP Surface, 2-Pin
- RS Stock No.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 131,90
(exc. VAT)
Kr. 164,90
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 60 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 13,19 | Kr. 131,90 |
| 100 - 240 | Kr. 11,383 | Kr. 113,83 |
| 250 - 490 | Kr. 9,861 | Kr. 98,61 |
| 500 + | Kr. 8,672 | Kr. 86,72 |
*price indicative
- RS Stock No.:
- 186-8039
- Mfr. Part No.:
- MJB45H11T4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Standards/Approvals | No | |
| Width | 15.88mm | |
| Height | 4.83mm | |
| Length | 10.29mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Standards/Approvals No | ||
Width 15.88mm | ||
Height 4.83mm | ||
Length 10.29mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available