Toshiba Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

Kr. 696,00

(exc. VAT)

Kr. 870,00

(inc. VAT)

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3000 +Kr. 0,232Kr. 696,00

*price indicative

RS Stock No.:
236-3586
Mfr. Part No.:
TBC847B,LM(T
Brand:
Toshiba
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Brand

Toshiba

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

200mA

Maximum Collector Emitter Voltage Vceo

50V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

60V

Maximum Power Dissipation Pd

320mW

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

6V

Minimum DC Current Gain hFE

200

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

3

Standards/Approvals

No

Length

2.9mm

Height

0.95mm

Series

TBC847

Automotive Standard

No

The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.

Storage temperature range −55 to 150 °C

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