Infineon BFP620H7764XTSA1 RF Bipolar Transistor, 7.5 mA NPN, 80 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1437
- Mfr. Part No.:
- BFP620H7764XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 33,06
(exc. VAT)
Kr. 41,32
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 2 990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 3,306 | Kr. 33,06 |
| 100 - 240 | Kr. 3,146 | Kr. 31,46 |
| 250 - 490 | Kr. 3,077 | Kr. 30,77 |
| 500 - 990 | Kr. 2,871 | Kr. 28,71 |
| 1000 + | Kr. 2,322 | Kr. 23,22 |
*price indicative
- RS Stock No.:
- 259-1437
- Mfr. Part No.:
- BFP620H7764XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 7.5mA | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 7.5V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 65GHz | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 185mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP620 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 7.5mA | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 7.5V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 65GHz | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 185mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP620 | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly linear low noise RF transistor provides outstanding performance for a wide range of wireless applications. It is based on Infineon's reliable high volume SiGe:C technology & Ideal for CDMA and WLAN applications.
Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application
Accurate SPICE GP model enables effective design in process
Pb-free (RoHS compliant) package
Related links
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon BFP193WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4.1 V, 4-Pin SOT-343