Infineon BFS483H6327XTSA1 RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363

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Subtotal (1 pack of 10 units)*

Kr. 60,17

(exc. VAT)

Kr. 75,21

(inc. VAT)

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  • Plus 160 unit(s) shipping from 10 August 2026
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Units
Per unit
Per Pack*
10 - 90Kr. 6,017Kr. 60,17
100 - 240Kr. 5,709Kr. 57,09
250 - 490Kr. 5,491Kr. 54,91
500 - 990Kr. 5,228Kr. 52,28
1000 +Kr. 4,198Kr. 41,98

*price indicative

Packaging Options:
RS Stock No.:
259-1460
Mfr. Part No.:
BFS483H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-363

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

450mW

Maximum Emitter Base Voltage VEBO

2V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Pin Count

6

Maximum Operating Temperature

150°C

Series

BFS

Standards/Approvals

RoHS

Length

2.1mm

Height

0.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Pb-free (RoHS compliant) package

Two (galvanic) internal isolated Transistor in one package

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