Infineon RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS Stock No.:
- 261-3953
- Mfr. Part No.:
- BFR360FH6765XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
Kr. 3 855,00
(exc. VAT)
Kr. 4 818,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 6 000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 1,285 | Kr. 3 855,00 |
| 6000 - 6000 | Kr. 1,156 | Kr. 3 468,00 |
| 9000 + | Kr. 1,041 | Kr. 3 123,00 |
*price indicative
- RS Stock No.:
- 261-3953
- Mfr. Part No.:
- BFR360FH6765XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Power Dissipation Pd | 210mW | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 0.55mm | |
| Series | BFR | |
| Width | 1.2mm | |
| Standards/Approvals | RoHS | |
| Length | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Power Dissipation Pd 210mW | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 0.55mm | ||
Series BFR | ||
Width 1.2mm | ||
Standards/Approvals RoHS | ||
Length 1.2mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
Related links
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