Microchip Split Gate 16 MB SPI Flash Memory 8-Pin SOIC, SST26VF016B-104V/SN

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Subtotal (1 pack of 5 units)*

Kr.94 04 

(exc. VAT)

Kr.117 55 

(inc. VAT)

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5 - 20Kr. 18,808Kr. 94,04
25 - 95Kr. 18,282Kr. 91,41
100 +Kr. 17,594Kr. 87,97

*price indicative

Packaging Options:
RS Stock No.:
905-3117
Mfr. Part No.:
SST26VF016B-104V/SN
Brand:
Microchip
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Brand

Microchip

Memory Size

16MB

Product Type

Flash Memory

Interface Type

SPI

Package Type

SOIC

Pin Count

8

Organisation

2M x 8 Bit

Maximum Clock Frequency

104MHz

Mount Type

Surface

Cell Type

Split Gate

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

105°C

Width

4 mm

Height

1.25mm

Length

4.9mm

Standards/Approvals

No

Number of Words

2M

Automotive Standard

AEC-Q100

Maximum Random Access Time

8ns

Series

SST26VF016B

Supply Current

25mA

Number of Bits per Word

8

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory


The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) Interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O Interface that allow for low power, high performance operation in a Compact low pin-count package. The use of Microchip’s SQI™ Interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and Block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features


Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure

x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

High Speed Clock Frequency- 104 MHz Max

Burst Modes

Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)

Fast Erase Time - Sector/Block Erase: 18 MS (Typical); Chip Erase 35 MS (Typical)

Flexible Erase Capability

Software Write Protection

Flash Memory, Microchip


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