Infineon 6EDL04I065NTXUMA1 High Side Gate Driver 6, 165 mA 28-Pin 17.5 V, PG-DSO-28
- RS Stock No.:
- 351-980
- Mfr. Part No.:
- 6EDL04I065NTXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr. 67,15
(exc. VAT)
Kr. 83,938
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 33,575 | Kr. 67,15 |
| 20 - 198 | Kr. 30,26 | Kr. 60,52 |
| 200 - 998 | Kr. 27,855 | Kr. 55,71 |
| 1000 - 1998 | Kr. 25,855 | Kr. 51,71 |
| 2000 + | Kr. 23,225 | Kr. 46,45 |
*price indicative
- RS Stock No.:
- 351-980
- Mfr. Part No.:
- 6EDL04I065NTXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 165mA | |
| Pin Count | 28 | |
| Package Type | PG-DSO-28 | |
| Fall Time | 26ns | |
| Driver Type | High Side | |
| Number of Outputs | 6 | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 13V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 17.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | 6EDL04 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 165mA | ||
Pin Count 28 | ||
Package Type PG-DSO-28 | ||
Fall Time 26ns | ||
Driver Type High Side | ||
Number of Outputs 6 | ||
Rise Time 60ns | ||
Minimum Supply Voltage 13V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 17.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series 6EDL04 | ||
Automotive Standard No | ||
The Infineon Three-phase gate driver 2nd generation is a full bridge driver to control power devices like IGBTs in 3-phase systems with a maximum blocking voltage. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions
Higher efficiency
Increased reliability
Easy of design
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