Infineon 2ED2304S06FXUMA1 MOSFET Gate Driver 2, 360 mA 8-Pin 600 V, DSO
- RS Stock No.:
- 226-6033
- Mfr. Part No.:
- 2ED2304S06FXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr. 119,685
(exc. VAT)
Kr. 149,61
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 4 800 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 7,979 | Kr. 119,69 |
| 75 - 135 | Kr. 7,58 | Kr. 113,70 |
| 150 - 360 | Kr. 7,261 | Kr. 108,92 |
| 375 - 735 | Kr. 6,933 | Kr. 104,00 |
| 750 + | Kr. 6,463 | Kr. 96,95 |
*price indicative
- RS Stock No.:
- 226-6033
- Mfr. Part No.:
- 2ED2304S06FXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 360mA | |
| Pin Count | 8 | |
| Fall Time | 40ns | |
| Package Type | DSO | |
| Driver Type | MOSFET | |
| Rise Time | 48ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Height | 1.75mm | |
| Series | 2ED2304S06F | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 360mA | ||
Pin Count 8 | ||
Fall Time 40ns | ||
Package Type DSO | ||
Driver Type MOSFET | ||
Rise Time 48ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Height 1.75mm | ||
Series 2ED2304S06F | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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