Infineon MOSFET Gate Driver, 290 mA 8-Pin 600V, SOIC

RS Stock No.:: 226-6178
Mfr. Part No.:: IRS2101STRPBF
Brand:: Infineon

Infineon MOSFET Gate Driver, 290 mA 8-Pin 600V, SOIC

Subtotal (2500 units, on reels of 2500)*

Kr. 14 782,50

(exc. VAT)

Kr. 18 477,50

(inc. VAT)

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In Stock

Plus 2 500 unit(s) shipping from 28 September 2026

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Units	Per unit	Per Reel*
2500 +	Kr. 5,913	Kr. 14 782,50

*price indicative

RS Stock No.:: 226-6178
Mfr. Part No.:: IRS2101STRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Gate Driver
	Output Current	290mA
	Pin Count	8
	Package Type	SOIC
	Fall Time	90ns
	Driver Type	MOSFET
	Number of Outputs	2
	Rise Time	170ns
	Minimum Supply Voltage	10V
	Maximum Supply Voltage	600V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Height	1.75mm
	Standards/Approvals	RoHS Compliant
	Width	4mm
	Series	IRS
	Length	5mm
	Mount Type	Surface
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Gate Driver
	Output Current 290mA
	Pin Count 8
	Package Type SOIC
	Fall Time 90ns
	Driver Type MOSFET
	Number of Outputs 2
	Rise Time 170ns
	Minimum Supply Voltage 10V
	Maximum Supply Voltage 600V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Height 1.75mm
	Standards/Approvals RoHS Compliant
	Width 4mm
	Series IRS
	Length 5mm
	Mount Type Surface
	Automotive Standard No

Datasheet - IRS2101STRPBF

Infineon IRS Series Gate Driver, 10V Minimum Supply Voltage, 600V Maximum Supply Voltage - IRS2101STRPBF

This gate driver provides dual-channel control for MOSFET switching in high-voltage applications, accepting a supply down to 10 V and operating up to 600 V. It is supplied in an 8-pin surface-mount SOIC package and is intended for users needing compact, high-voltage MOSFET driving capability across a wide temperature range.

Features and Benefits:

• 290 mA output current delivers sufficient gate drive for medium-power MOSFETs
• 170 ns rise time enables relatively fast turn-on for efficient switching
• 90 ns fall time ensures timely turn-off to limit overlap losses
• Rated to 600 V operation supports high-voltage topologies
• Operates from 10 V supply for compatibility with common control rails
• RoHS compliance reduces hazardous substance concerns in assemblies

Applications

• Suitable for high-voltage switch-mode power supplies
• Used with half-bridge MOSFET arrangements in converters
• Suitable for industrial motor-drive gate control
• Used in power factor correction stage gate driving
• Can be used for isolated gate-drive implementations

What package and mounting style does it use?

It is supplied in an 8-pin SOIC package designed for surface mount.

What ambient temperature range can it handle?

The device functions across -40 °C to 125 °C operating extremes.

How many independent outputs are available?

There are two outputs provided for dual-MOSFET control.

Is it suitable for automotive specification use?

It is not classified as an automotive-standard device.