onsemi NCD57252DWR2G MOSFET Gate Driver, 6.5 μA 16-Pin 22 V, SOIC
- RS Stock No.:
- 229-6337
- Mfr. Part No.:
- NCD57252DWR2G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.64 75
(exc. VAT)
Kr.80 938
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 460 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 32,375 | Kr. 64,75 |
| 20 - 198 | Kr. 27,915 | Kr. 55,83 |
| 200 + | Kr. 24,255 | Kr. 48,51 |
*price indicative
- RS Stock No.:
- 229-6337
- Mfr. Part No.:
- NCD57252DWR2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6.5μA | |
| Pin Count | 16 | |
| Package Type | SOIC | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 12ns | |
| Minimum Supply Voltage | 5V | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Series | NCD57252 | |
| Length | 10.45mm | |
| Width | 7.6 mm | |
| Height | 2.65mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Output Current 6.5μA | ||
Pin Count 16 | ||
Package Type SOIC | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 12ns | ||
Minimum Supply Voltage 5V | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Series NCD57252 | ||
Length 10.45mm | ||
Width 7.6 mm | ||
Height 2.65mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCDV575 series high current dual channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side.
Design flexibility
Consistent performance
Faster switching capability
Short propagation delays with accurate matching
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