IXYS MII100-12A3, Type N-Channel IGBT Module, 135 A 1200 V, 7-Pin Y4-M5, Surface
- RS Stock No.:
- 193-874
- Mfr. Part No.:
- MII100-12A3
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 193-874
- Mfr. Part No.:
- MII100-12A3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 135A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 560W | |
| Package Type | Y4-M5 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Switching Speed | 30kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 94mm | |
| Height | 30mm | |
| Standards/Approvals | No | |
| Series | NPT | |
| Width | 34 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 135A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 560W | ||
Package Type Y4-M5 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 7 | ||
Switching Speed 30kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Maximum Operating Temperature 150°C | ||
Length 94mm | ||
Height 30mm | ||
Standards/Approvals No | ||
Series NPT | ||
Width 34 mm | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.