Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 124-8810
Mfr. Part No.:: IKW50N60H3FKSA1
Brand:: Infineon

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

Available to back order for despatch 31.03.2026

Added

Price Each (In a Tube of 30)

Kr. 31,276

(exc. VAT)

Kr. 39,095

(inc. VAT)

Units	Per unit	Per Tube*
30 +	Kr. 31,276	Kr. 938,28
*price indicative

RS Stock No.:: 124-8810
Mfr. Part No.:: IKW50N60H3FKSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	100 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	333 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Energy Rating	2.55mJ
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C
Gate Capacitance	2960pF

RS Stock No.:: 124-8810
Mfr. Part No.:: IKW50N60H3FKSA1
Brand:: Infineon