Infineon FP15R12W1T4B3BOMA1, Type N-Channel IGBT Module, 28 A 1200 V, 23-Pin EASY1B, Clamp

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Subtotal (1 tray of 24 units)*

Kr. 5 647,704

(exc. VAT)

Kr. 7 059,624

(inc. VAT)

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Units
Per unit
Per Tray*
24 - 24Kr. 235,321Kr. 5 647,70
48 +Kr. 229,434Kr. 5 506,42

*price indicative

RS Stock No.:
165-5899
Mfr. Part No.:
FP15R12W1T4B3BOMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

28A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

130W

Package Type

EASY1B

Mount Type

Clamp

Channel Type

Type N

Pin Count

23

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

48mm

Height

12mm

Width

33.8 mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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