IXYS, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-268, Through Hole

Subtotal (1 tube of 30 units)*

Kr. 6 115,83

(exc. VAT)

Kr. 7 644,78

(inc. VAT)

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Per Tube*
30 +Kr. 203,861Kr. 6 115,83

*price indicative

RS Stock No.:
168-4411
Mfr. Part No.:
IXGT30N120B3D1
Brand:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

300W

Package Type

TO-268

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

160ns

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

3.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

Mid-Frequency

Automotive Standard

No

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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