STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

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Subtotal (1 tube of 30 units)*

Kr.1 545 78 

(exc. VAT)

Kr.1 932 24 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90Kr. 51,526Kr. 1 545,78
120 - 480Kr. 46,831Kr. 1 404,93
510 - 990Kr. 45,632Kr. 1 368,96
1020 +Kr. 44,491Kr. 1 334,73

*price indicative

RS Stock No.:
212-2106
Mfr. Part No.:
STGW100H65FB2-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

145 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Package Type

TO247-4

Channel Type

N

Pin Count

4

Transistor Configuration

Single

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

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