Infineon IGP40N65H5XKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 215-6632
- Mfr. Part No.:
- IGP40N65H5XKSA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 215-6632
- Mfr. Part No.:
- IGP40N65H5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor with low gate charge.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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