Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

Kr.869 31 

(exc. VAT)

Kr.1 086 63 

(inc. VAT)

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  • 2 130 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30Kr. 28,977Kr. 869,31
60 - 120Kr. 27,528Kr. 825,84
150 +Kr. 26,369Kr. 791,07

*price indicative

RS Stock No.:
215-6640
Mfr. Part No.:
IHW40N120R5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20 V, ±25 V

Maximum Power Dissipation

394 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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