Infineon IGBT Module 1200 V

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RS Stock No.:
244-5369
Mfr. Part No.:
F475R06W1E3BOMA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

4

Maximum Power Dissipation Pd

275W

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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