STMicroelectronics IGBT, 50 A 1200 V, 3-Pin, Through Hole
- RS Stock No.:
- 248-4895
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
Kr. 2 058,39
(exc. VAT)
Kr. 2 572,98
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 30 unit(s) shipping from 21 September 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | Kr. 68,613 | Kr. 2 058,39 |
| 150 + | Kr. 67,767 | Kr. 2 033,01 |
*price indicative
- RS Stock No.:
- 248-4895
- Mfr. Part No.:
- STGYA50M120DF3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | STGYA50M120DF3 | |
| Height | 5.1mm | |
| Width | 21.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series STGYA50M120DF3 | ||
Height 5.1mm | ||
Width 21.1mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
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