Infineon IGB15N65S5ATMA1 IGBT, 15 A 650 V TO-263
- RS Stock No.:
- 258-0983
- Mfr. Part No.:
- IGB15N65S5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr. 44,50
(exc. VAT)
Kr. 55,62
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 22,25 | Kr. 44,50 |
| 20 - 48 | Kr. 18,535 | Kr. 37,07 |
| 50 - 98 | Kr. 17,275 | Kr. 34,55 |
| 100 - 198 | Kr. 16,245 | Kr. 32,49 |
| 200 + | Kr. 14,87 | Kr. 29,74 |
*price indicative
- RS Stock No.:
- 258-0983
- Mfr. Part No.:
- IGB15N65S5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650 V, 15 A high speed switching TRENCHSTOP 5 in D2Pak package single IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
No need for gate clamping components
Gate drivers with Miller clamping not required
Reduction in the EMI filtering needed
Excellent for paralleling
Related links
- Infineon IGBT, 15 A 650 V TO-263
- Infineon IKA15N65H5XKSA1 IGBT 3-Pin PG-TO-220-3 FP
- Infineon IGBT 3-Pin PG-TO-220-3 FP
- ROHM RGS30NL65DHRBTL IGBT 3-Pin TO-263L, Surface
- ROHM RGS30NL65HRBTL IGBT 3-Pin TO-263L, Surface
- Vishay Type N-Channel MOSFET 650 V TO-263
- Vishay Type N-Channel MOSFET 650 V TO-263 SIHB24N65E-GE3
- Infineon IGBT, 24 A 600 V TO-263