STMicroelectronics STGSB200M65DF2AG, NPN-Channel Single IGBT, 216 A 650 V, 9-Pin ECOPACK, Surface

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Subtotal (1 reel of 200 units)*

Kr. 33 818,80

(exc. VAT)

Kr. 42 273,60

(inc. VAT)

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200 - 200Kr. 169,094Kr. 33 818,80
400 +Kr. 164,866Kr. 32 973,20

*price indicative

RS Stock No.:
273-5093
Mfr. Part No.:
STGSB200M65DF2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

216A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

714W

Number of Transistors

2

Configuration

Single

Package Type

ECOPACK

Mount Type

Surface

Channel Type

NPN

Pin Count

9

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

UL1557

Height

5.5mm

Length

4mm

Width

22 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Tight parameter distribution

Low thermal resistance

Dice on direct bond copper (DBC) substrate

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