STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 2 units)*

Kr. 10,89

(exc. VAT)

Kr. 13,612

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 28Kr. 5,445Kr. 10,89
30 - 58Kr. 4,945Kr. 9,89
60 - 118Kr. 4,395Kr. 8,79
120 - 238Kr. 3,935Kr. 7,87
240 +Kr. 3,525Kr. 7,05

*price indicative

Packaging Options:
RS Stock No.:
287-7045
Mfr. Part No.:
STGD4H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

4A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Number of Transistors

1

Maximum Power Dissipation Pd

75W

Package Type

TO-252

Configuration

Single Collector

Mount Type

Surface

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.7 mm

Length

1.7mm

Height

2.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Low thermal resistance

Short circuit rated

Soft and fast recovery antiparallel diode

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