onsemi FGH40N60UFDTU, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 unit)*

Kr.43 36 

(exc. VAT)

Kr.54 20 

(inc. VAT)

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  • Plus 35 unit(s) shipping from 16. februar 2026
  • Plus 9 unit(s) shipping from 16. februar 2026
  • Plus 350 unit(s) shipping from 23. februar 2026
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10 +Kr. 37,29

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Packaging Options:
RS Stock No.:
759-9273
Mfr. Part No.:
FGH40N60UFDTU
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

290W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

Field Stop

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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