STMicroelectronics STGW20V60DF IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

Kr.194 25 

(exc. VAT)

Kr.242 80 

(inc. VAT)

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5 - 5Kr. 38,85Kr. 194,25
10 - 20Kr. 33,634Kr. 168,17
25 - 95Kr. 32,284Kr. 161,42
100 - 495Kr. 26,312Kr. 131,56
500 +Kr. 23,108Kr. 115,54

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Packaging Options:
RS Stock No.:
791-9374
Mfr. Part No.:
STGW20V60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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