STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 tape of 5 units)*

Kr.74 82 

(exc. VAT)

Kr.93 525 

(inc. VAT)

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  • 2 470 unit(s) shipping from 25. mars 2026
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5 - 20Kr. 14,964Kr. 74,82
25 - 45Kr. 14,186Kr. 70,93
50 - 120Kr. 12,768Kr. 63,84
125 - 245Kr. 11,486Kr. 57,43
250 +Kr. 10,936Kr. 54,68

*price indicative

Packaging Options:
RS Stock No.:
795-9019
Mfr. Part No.:
STGD18N40LZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

420 V

Maximum Gate Emitter Voltage

16V

Maximum Power Dissipation

125 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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