MikroElektronika MIKROE-4831 FRAM 6 Click, FeRAM Add On Board for CY15B102Q for mikroBUS Socket
- RS Stock No.:
- 247-5724
- Mfr. Part No.:
- MIKROE-4831
- Brand:
- MikroElektronika
Subtotal (1 unit)*
Kr. 1 201,77
(exc. VAT)
Kr. 1 502,21
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 3 unit(s) shipping from 29 September 2026
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Units | Per unit |
|---|---|
| 1 + | Kr. 1 201,77 |
*price indicative
- RS Stock No.:
- 247-5724
- Mfr. Part No.:
- MIKROE-4831
- Brand:
- MikroElektronika
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | MikroElektronika | |
| Product Type | Memory Development Kit | |
| Memory Size | 2MB | |
| Kit Classification | Add On Board | |
| For Use With | mikroBUS Socket | |
| Featured Device | CY15B102Q | |
| Memory Type | FeRAM | |
| Kit Name | FRAM 6 Click | |
| Interface Type | SPI | |
| Standards/Approvals | No | |
| Select all | ||
|---|---|---|
Brand MikroElektronika | ||
Product Type Memory Development Kit | ||
Memory Size 2MB | ||
Kit Classification Add On Board | ||
For Use With mikroBUS Socket | ||
Featured Device CY15B102Q | ||
Memory Type FeRAM | ||
Kit Name FRAM 6 Click | ||
Interface Type SPI | ||
Standards/Approvals No | ||
The The MikroElektronika's FRAM 6 Click is a compact add-on board that contains highly reliable ferroelectric random access memory. This board features the CY15B102Q, a 2Mbit nonvolatile memory employing an advanced ferroelectric process organized as 256K words of 8 bits each from Infineon, now part of Infineon. This SPI configurable FRAM performs read and write operations similar to a RAM providing reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. This Click board is ideal for nonvolatile memory applications requiring frequent or rapid writes and unlimited endurance.
Low power consumption
High endurance
121 years data retention
Advanced high reliability ferroelectric process
Fast serial interface
Sophisticated write protection scheme
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