STMicroelectronics SuperMESH Type N-Channel MOSFET, 9 A, 400 V Enhancement, 3-Pin TO-263 STB11NK40ZT4

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Kr.61 78 

(exc. VAT)

Kr.77 225 

(inc. VAT)

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5 - 45Kr. 12,356Kr. 61,78
50 - 95Kr. 11,714Kr. 58,57
100 - 495Kr. 10,89Kr. 54,45
500 +Kr. 9,998Kr. 49,99

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Packaging Options:
RS Stock No.:
151-428
Mfr. Part No.:
STB11NK40ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

400V

Series

SuperMESH

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.55Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.4 mm

Standards/Approvals

RoHS

Length

15.85mm

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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